2N1132 GP BJT

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Stock

  • 17 CENTAL SEMI
  • 195 FAIRCHILD
  • 5 HARRIS SEMI
  • 39 HUGHES
  • 939 INTERMETALL
  • 92 MOTOROLA
  • 402 NATIONAL SEMICONDUCTOR
  • 31257 NEW JERSEY SEMICONDUCTOR
  • 22 RAYTHEON
  • 5 SOLID STATE TRANSISTOR
  • 6 SOLITRON
  • 86 SYLVANIA
  • 1 TELEDYNE
  • 5769 TEXAS INSTRUMENT
  • 14 TRANSITRON
  • 10 WATKINS JOHNSON
  • 14 WORLD WIDE

Trans GP BJT PNP 40V 0.6A 3-Pin TO-39

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 50 V
Maximum Collector Emitter Saturation Voltage 1.3@15mA@150mA V
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 0.6 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 600 mW
Type PNP