2N2828 RF BJT

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  • 21 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 15V 0.04A 4-Pin TO-72

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Features Values Unit
Configuration Single
Maximum Base Emitter Saturation Voltage 1@1mA@10mA V
Maximum Collector Base Voltage 30 V
Maximum Collector Emitter Saturation Voltage 0.4@1mA@10mA V
Maximum Collector Emitter Voltage 15 V
Maximum DC Collector Current 0.04 A
Maximum Emitter Base Voltage 3 V
Maximum Operating Temperature 200 °C
Maximum Transition Frequency 1600(Typ) MHz
Minimum DC Current Gain 30@3mA@1V
Minimum Operating Temperature -65 °C
Number of Elements per Chip 1
Type NPN