2N3866 RF BJT
Datasheet: View
Stock
- 7 FRD
- 376 MOTOROLA
- 19909 NEW JERSEY SEMICONDUCTOR
- 4 RCA
- 25 SGS
- 31 SOLID STATE SYSTEMS
- 22 TELEDYNE SEMI
- 23 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 1@20mA@100mA | V |
| Maximum Collector Emitter Voltage | 30 | V |
| Maximum DC Collector Current | 0.4 | A |
| Maximum Emitter Base Voltage | 3.5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Transition Frequency | 800(Typ) | MHz |
| Minimum DC Current Gain | 15@0.1mA@5V|5@360mA@5V | |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Output Power | 1(Min) | W |
| Type | NPN |