2N6304 RF BJT
Datasheet: View
Stock
- 29 MOTOROLA
- 26 NEW JERSEY SEMICONDUCTOR
- 2 RF POWER
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Collector Base Voltage | 30 | V |
| Maximum Collector Emitter Voltage | 15 | V |
| Maximum DC Collector Current | 0.05 | A |
| Maximum Emitter Base Voltage | 3.5 | V |
| Maximum Transition Frequency | 1400(Min) | MHz |
| Minimum DC Current Gain | 25@2mA@5V | |
| Number of Elements per Chip | 1 | |
| Type | NPN |