BF241 RF BJT

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  • 5023 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 40V 0.05A 3-Pin TO-92 Bulk

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Features Values Unit
Configuration Single
Maximum Base Emitter Saturation Voltage 0.74@0.1mA@1mA V
Maximum Collector Base Voltage 40 V
Maximum Collector Emitter Saturation Voltage 0.65@0.1mA@1mA V
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 0.05 A
Maximum Emitter Base Voltage 4 V
Maximum Operating Temperature 150 °C
Maximum Transition Frequency 1100 MHz
Minimum DC Current Gain 65@1mA@10V
Minimum Operating Temperature -55 °C
Number of Elements per Chip 1
Type NPN