BLF242 RF MOSFET

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  • 73 NEW JERSEY SEMICONDUCTOR

Trans RF MOSFET N-CH 65V 1A 4-Pin SOT-123A

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Features Values Unit
Channel Mode Enhancement
Channel Type N
Configuration Single Dual Source
Maximum Continuous Drain Current 1 A
Maximum Drain Source Resistance 5000@1V mOhm
Maximum Drain Source Voltage 65 V
Maximum Frequency 175 MHz
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 16000 mW
Minimum Operating Temperature -65 °C
Number of Elements per Chip 1