BLF248 RF MOSFET

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  • 10 NEW JERSEY SEMICONDUCTOR
Features Values Unit
Channel Mode Enhancement
Channel Type N
Configuration Dual Common Source
Maximum Continuous Drain Current 25 A
Maximum Continuous Drain Current Range 20 to 50 A
Maximum Drain Source Resistance 150@10V MOhm
Maximum Drain Source Voltage 65 V
Maximum Frequency 225 MHz
Maximum Gate Source Voltage ±20 V
Mode of Operation Class AB
Number of Elements per Chip 2
Output Power 300 W
Types of Output Stages Push Pull