BUZ90A MOSFET

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  • 2561 NEW JERSEY SEMICONDUCTOR

Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220AB

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Features Values Unit
Category Power MOSFET
Channel Mode Enhancement
Channel Type N
Configuration Single
Maximum Continuous Drain Current 4 A
Maximum Drain Source Voltage 600 V
Maximum Gate Source Voltage ±20 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 75000 mW
Minimum Operating Temperature -55 °C
Number of Elements per Chip 1