IRF234 MOSFET
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- 1 HARRIS
- 1 INTERNATIONAL RECTIFIER
- 3229 NEW JERSEY SEMICONDUCTOR
- 1 RF POWER
Trans MOSFET N-CH 250V 8.4A 3-Pin(2+Tab) TO-3
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Power MOSFET | |
| Channel Type | N | |
| Configuration | Single | |
| Maximum Continuous Drain Current | 8.4 | A |
| Maximum Drain Source Voltage | 250 | V |
| Maximum Power Dissipation | 74000 | mW |
| Number of Elements per Chip | 1 |