TIP41A GP BJT
Datasheet: View
Stock
- 225 ADT
- 4 FAIRCHILD
- 6 MATASHITA
- 252 MOTOROLA
- 22 NATIONAL SEMICONDUCTOR
- 9338 NEW JERSEY SEMICONDUCTOR
- 28 SGS
- 426 TEXAS INSTRUMENT
- 426 TEXET
- 3 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 1.5@0.6A@6A | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 6 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 2000 | mW |
| Maximum Transition Frequency | 3(Min) | MHz |
| Type | NPN |