TN3725 GP BJT

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  • 843 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 50V 0.5A 3-Pin(3+Tab) TO-237

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 80 V
Maximum Collector Emitter Saturation Voltage 0.25@1mA@10mA 0.26@10mA@100mA
Maximum Collector Emitter Voltage 50 V
Maximum DC Collector Current 0.5 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 850 mW
Maximum Transition Frequency 300(Min) MHz
Type NPN